• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    In a distance imaging sensor (RS) according to the invention, a multiplicity of distance sensors are arranged in a one-dimensional direction. The plurality of distance sensors include a photogate electrode (PG), first and second signal charge accumulation regions (FD1, FD2) disposed on one side of the photogate electrode (PG), third and fourth signal charge accumulation regions (FD3, FD4) On the other side, first transfer electrodes (TX1) for causing a charge to flow into the first and fourth signal charge accumulation areas (FD1, FD4) in response to a first transfer signal (S1) cause a second transfer electrode (TX2) to cause a transfer Charge flows into the second and third signal charge accumulation regions (FD2, FD3) in response to a second transfer signal (S 2).
    公开号:CH711151B1
    申请号:CH01354/16
    申请日:2015-04-17
    公开日:2017-10-13
    发明作者:Mase Mitsuhito；Hiramitsu Jun；Shimada C/O Hamamatsu Photonics K K Akihiro
    申请人:Hamamatsu Photonics Kk；
    IPC主号:
    专利说明:

    Description Technical Field The present invention relates to a distance imaging sensor.
    Background Art A distance imaging sensor of a TOF (Time-of-Flight) type (for example, see Patent Literature 1) is known. In the distance image sensor described in Patent Literature 1, each distance imaging sensor arranged in a one-dimensional direction is formed with a rectangular charge generation region, transfer electrodes respectively provided along two opposite sides of the charge generation region, and signal charge accumulation regions for accumulating signal charges transferred through the transfer electrodes, respectively.
    In this distance mapping sensor, the transfer electrodes distribute a charge generated in the charge generation region as the signal charges to the respective signal charge accumulation regions in response to transfer signals of different phases. The distributed signal charges are respectively accumulated in the associated signal charge accumulation areas. The signal charges accumulated in the respective signal charge accumulation areas are read out as outputs associated with the accumulated charge amounts. A distance to an object is calculated based on a ratio of these outputs.
    Bibliography
    Patent Literature [0004] Patent Literature 1: International Publication WO 2007/026779 Summary of the Invention
    Technical Problem [0005] In the charge distribution type range map sensor in which the plurality of distance sensors are arranged in the one-dimensional direction, crosstalk of charges occurs between distance sensors adjacent in the one-dimensional direction, effects of charge crosstalk on a distance measurement between them may occur be different adjacent proximity sensors. When the effects of the charge crosstalk on the distance measurement between the adjacent distance sensors are different, it becomes difficult to adequately perform the range finding.
    An object of one aspect of the present invention is to provide a charge-distribution-type range-finding sensor, wherein the range-of-charge sensor causes the same effects of charge crosstalk on the range-finding between the distance sensors adjacent in the one-dimensional direction. Solution to the Problem [0007] The inventors have conducted research and study on the charge-distribution-type range-finding sensor which causes the same effects of charge crosstalk on the distance measurement between the distance sensors adjacent in the one-dimensional direction. As a result, the inventors found the following facts.
    In the distance image sensor as described in the above Patent Literature 1, a signal can be detected by another distance sensor other than one on which light is incident (which will be referred to as an incident removal sensor hereinafter). It is considered that this is caused by occurrence of such crosstalk that a charge generated in the charge generation region of the fouling distance sensor flows into each of the signal charge accumulation regions of the other distance sensor. Effects of crosstalk on the respective signal charge generation areas of the other distance sensor differ depending on arrangements of the respective signal charge accumulation areas. In particular, the effect is significantly different depending on whether or not the displacement of each signal charge accumulation area in the other distance sensor is on the side of the impact distance sensor. Namely, the effect of crosstalk on the signal charge accumulation area arranged on the side of the light incident distance sensor in the other distance sensor is larger, while the effect of crosstalk on the signal charge accumulation area arranged on the opposite side to the side of the light incident distance sensor is smaller.
    In the charge distribution type range sensor as described above, the distance to the object is calculated based on the ratio of the outputs from the respective signal charge accumulation areas. For this reason, if there are charge discharges from the adjacent distance sensor to the respective signal charge accumulation areas, the calculated distance will change. For example, even if in the signal accumulation regions of the two distance sensors in which light occurs, amounts of charge distributed in one phase in response to one transfer signal and amounts of charge distributed in response to the other phase should be identical, measured distances could be different due to the difference of the effects of crosstalk. In particular, even in a situation where two light attack distance sensors should receive the same measured distance, the distance sensors may provide different measured distances if the arrangements of the respective signal charge accumulation areas for accumulating signal charges are different in response to the same phase transfer signals, depending on whether each area is located on the other one side of the other of the light incident distance sensor or not.
    The inventors who have turned their attention to these facts found by themselves further conducted intensive research on a configuration for compensating the effects of charge cross talk on the distance measurement between the distance sensors adjacent in the one-dimensional direction, and achieved the present invention ,
    A distance image sensor according to an aspect of the present invention is a distance image sensor in which a plurality of distance sensors are arranged in a one-dimensional direction, wherein each of the plurality of distance sensors comprises: a charge generation region in which charge is generated in accordance with an incident light; first and second signal charge accumulation regions disposed away from the charge generation region on one side in the one-dimensional direction of the charge generation region and away from each other along a direction perpendicular to the one-dimensional direction, and configured to accumulate charge generated in the charge generation region as signal charges; a third signal charge accumulation region disposed away from the charge generation region on the other side in the one-dimensional direction of the charge generation region and opposite to the first signal charge accumulation region with the charge generation region therebetween in the one-dimensional direction, and configured to accumulate the charge generated in the charge generation region as a signal charge; a fourth signal charge accumulation region disposed away from the charge generation region on the other side in the one-dimensional direction of the charge generation region and opposite to the second signal charge accumulation region with the charge generation region therebetween in the one-dimensional direction, and configured to accumulate the charge generated in the charge generation region as a signal charge; two first transfer electrodes, each disposed between the first and fourth signal charge accumulation regions and the charge generation region, configured to cause the charge generated in the charge generation region to flow as the signal charges into the first and fourth signal charge accumulation regions in response to a first transfer signal; and two second transfer electrodes each disposed between the second and third signal charge accumulation regions and the charge generation region and configured to cause the charge generated in the charge generation region to be a signal transfer to the second and third signal charge accumulation regions in response to a second transfer signal is in a phase different from the first transfer signal, flows and wherein in any two distance direction sensors adjacent in the one-dimensional direction, the first signal charge accumulation area and the fourth signal charge accumulation area are adjacent in the one-dimensional direction and the second signal charge accumulation area and the third signal charge accumulation area are adjacent in the one-dimensional direction.
    In this aspect, the plurality of distance sensors are arranged in the one-dimensional direction. Each of the plurality of distance sensors includes the first and second signal charge accumulation regions on the one side in the one-dimensional direction of the charge generation region, and includes the third and fourth signal charge accumulation regions on the other side of the charge generation region. The first and fourth signal charge accumulation areas accumulate the signal charges which are caused to flow in response to the first transfer signal. The second and third signal charge accumulation areas accumulate the signal charges which are caused to flow in response to the second transfer signal, namely, in each of the plurality of distance sensors, the signal charge accumulation areas are for accumulating the signal charges which are caused in response to the first Transfer signal are respectively arranged on both sides in the one-dimensional direction of the charge generation region and the signal charge accumulation regions for accumulating the signal charges, which are caused to flow in response to the second transfer signal, respectively arranged on both sides in the one-dimensional direction of the charge generation region. For this reason, in each of the plurality of distance sensors, charges discharged from another range sensor become in good balance with the signal charge accumulation areas for accumulating the signal charges caused to flow in response to the first transfer signal and the signal charge accumulation areas for accumulating the signal charges. which are caused to flow in response to the second transfer signal, distributed. Therefore, the effects of charge crosstalk on the distance measurement between the distance sensors adjacent in the one-dimensional direction become identical.
    In this aspect, the sensor may include a plurality of unnecessary charge collecting regions disposed away from the charge generating region on the one side and on the other side in the one-dimensional direction of the charge generating region, and configured to collect in the charge generating region generated charge as unnecessary charges; and a plurality of third transfer electrodes each disposed between the plurality of unnecessary charge collecting regions and the charge generating region and configured to cause the charge generated in the charge generating region to be the unnecessary charges in the plurality of unnecessary charge collecting regions Response to a third transfer signal, which is different in one phase from the first and the second transfer signal, flows. In this case, since the unnecessary charges can be discharged to the outside, the measurement accuracy of a distance can be improved.
    In this aspect, the sensor may include a plurality of unnecessary charge collecting regions disposed with the charge generating region therebetween in the direction perpendicular to the one-dimensional direction and away from the charge generating region, and configured to collect the charge generated in the charge generating region as unnecessary charges; and a plurality of third transfer electrodes each disposed between the plurality of unnecessary charge collecting regions and the charge generating region and configured to cause the charges generated in the charge generating region to be unnecessary charges to the plurality of unnecessary charge collecting regions Response to a third transfer signal, which is different in one phase from the first and the second transfer signal, flows.
    In this case, since the unnecessary charges can be discharged to the outside, the measurement accuracy of removal can be improved.
    Advantageous Effects of Invention According to the above-described aspect of the present invention, the charge-distribution type range-finding sensor can be provided as the distance-measuring sensor which causes the same effects of charge cross-talk on the distance measurement between distance sensors adjacent in the one-dimensional direction.
    Brief Description of the Figures [0017]
    FIG. 1 is a configuration diagram of a distance mapping sensor according to an embodiment of the present invention. FIG.
    FIG. 2 is a schematic plan view showing a part of an imaging area in the distance image sensor of FIG. 1. FIG.
    FIG. 3 is a drawing showing a cross-sectional configuration taken along the line III-III in FIG. 2.
    FIG. 4 is a drawing showing a cross-sectional configuration along the line IV-IV in FIG. 2.
    FIG. 5 is a drawing showing a cross-sectional configuration along the line V-V in FIG. 2.
    Fig. 6 is a drawing showing potential profiles in the vicinity of a second main surface of a semiconductor substrate.
    Fig. 7 is a drawing showing potential profiles in the vicinity of the second main surface of the semiconductor substrate.
    Fig. 8 is a drawing showing potential profiles in the vicinity of the second main surface of the semiconductor substrate.
    Fig. 9 is a timing chart of various signals.
    Fig. 10 is an overall cross-sectional view of an imaging device.
    Fig. 11 is a timing chart of various signals.
    Fig. 12 is a drawing showing an overall configuration of a distance image measuring apparatus.
    Fig. 13 is a drawing for explaining a discharge of charge in a conventional distance image sensor.
    14 is a schematic plan view showing an imaging region of a distance image sensor forming pixel according to a modification example.
    DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with particular reference to the figures. It should be noted that in the description the same elements or elements having the same functionality are denoted by the same reference numerals without a redundant description.
    FIG. 1 is a configuration diagram of the distance map sensor according to the present embodiment. FIG.
    The distance imaging sensor RS is a line sensor having an arrangement structure in which a plurality of distance sensors P-1 to Pn (where N is a natural number not less than 2) are arranged in a one-dimensional direction A. Each or every two or more of the plurality of distance sensors P-1 to Pn constitutes a pixel of the distance image sensor RS. In the present embodiment, each of the distance sensors P-1 to PN forms one pixel of the distance-imaging sensor RS.
    Fig. 2 is a schematic plan view showing a part of an imaging area in the distance image sensor of Fig. 1; FIG. 3 is a drawing showing a cross-sectional configuration along the line III-III in FIG. 2. FIG. FIG. 4 is a drawing showing a cross-sectional configuration along the line IV-IV in FIG. 2. FIG. 5 is a drawing showing a cross-sectional configuration along the line V-V in FIG. 2. Figs. 2 to 5 particularly show 2 adjacent distance sensors PN, PN + 1 (where n is a natural number not larger than N-1).
    The distance image sensor RS is a front-exposed distance image sensor comprising a semiconductor substrate 1 having first and second major surfaces 1a, 1b opposite to each other. The second main surface 1b is a light incident surface. The distance image sensor RS includes a light-trap layer LI in front of the second main surface 1b, which is the light incident surface. In the light intercepting layer LI, apertures Lla in the one-dimensional direction A are formed in respective regions belonging to the plurality of distance sensors P-1 to Pn. The panels Lla have a rectangular shape. In the present embodiment, the panels are formed in a rectangle. Light enters through the baffles Lla of the light intercepting layer LI to enter the semiconductor substrate 1. Therefore, the apertures Lla define light receiving areas in the semiconductor substrate 1. The light intercepting layer LI includes, for example, a metal such as aluminum.
    The semiconductor substrate 1 includes a p-type first semiconductor region 3 located on the first main surface 1a side, and a p-type second semiconductor region 5 having a lower impurity concentration than the first semiconductor region 3 and on which Side of the second main surface 1b is arranged. The semiconductor substrate 1 may be obtained by, for example, growing on a p-type semiconductor substrate, a p-type epitaxial layer having a lower impurity concentration than the semiconductor substrate. An insulating layer 7 is formed on the second main surface 1 b (the second semiconductor region 5) of the semiconductor substrate 1.
    The plurality of distance sensors P-1 to Pn are arranged in the one-dimensional direction A on the insulating layer 7. Each of the plurality of distance sensors P-1 to PN includes a photogate electrode PG, a first signal charge accumulation region FD1, a second signal charge accumulation region FD2, a third signal charge accumulation region FD3, a fourth signal charge accumulation region FD4, two first transfer electrodes TX1, two second transfer electrodes TX2, four unnecessary transients. Charge collection areas 11a to 11d, four third transfer electrodes TX3, and a p-type well region W. FIG. 2 is drawn without a representation of conductors 13 (see FIGS. 3 to 5) applied to the first to fourth signal charge accumulation region FD1 -FD4 are arranged.
    The photogate electrode PG is arranged belonging to the diaphragm Lla. A region belonging to the photogate electrode PG in the semiconductor substrate 1 (second semiconductor region 5) (which is the region positioned below the photogate electrode PG in FIGS. 3 to 5) functions as a charge generation region in which a charge is generated according to the incident light. The photogate electrode PG also corresponds to the shape of the diaphragm Lla and has a rectangular shape in a plan view. In the present embodiment, the photogate electrode PG is rectangular in shape, like the diaphragm Lla, and that is, the photogate electrode PG has a planar shape having first and second long sides L1, L2 perpendicular to the one-dimensional direction A. and opposite to each other, and first and second short sides S1, S2 which are parallel to the one-dimensional direction A and opposite to each other. The photogate electrode PG has the first long side L1 on one side in the one-dimensional direction A and the second long side L2 on the other side in the one-dimensional direction A.
    The first and second signal charge accumulation regions FD1, FD2 are away from the photogate electrode PG on the first long side L1 side of the photogate electrode PG (on the one side in the one-dimensional direction A), and away from each other along the one one-dimensional direction A vertical direction away. The third and fourth signal charge accumulation areas FD3, FD4 are away from the photogate electrode PG on the second long side L2 side of the photogate electrode PG (on the other side in the one-dimensional direction A) and along the one-dimensional direction A vertical direction away.
    Namely, the third signal charge accumulation region FD3 is disposed opposite to the first signal charge accumulation region FD1 with the photogate electrode PG therebetween in the one-dimensional direction A. The fourth signal charge accumulation region FD4 is disposed opposite to the second signal charge accumulation region FD2 with the photo gate electrode PG therebetween in the one-dimensional direction A. The first to fourth signal charge accumulation regions FD1-FD4 are n-type semiconductor regions having a high impurity concentration, which are formed in the second semiconductor region 5 and configured to accumulate the charge generated in the charge generation region as signal charges.
    The unnecessary charge collecting regions 11a, 11b are away from the photogate electrode PG on the first long side L1 side of the photogate electrode PG and opposite to each other with the first and second signal charge accumulation regions FD1, FD2 therebetween arranged in the one-dimensional direction A vertical direction. Along the direction perpendicular to the one-dimensional direction A, the unnecessary charge collecting area 11a is adjacent to the first signal charge accumulating area FD1, and the unnecessary charge collecting area 11b is adjacent to the second signal charge accumulating area FD2.
    The unnecessary charge collecting regions 11c, 11d are from the photogate electrode PG on the second long side L2 side of the photogate electrode PG and opposite to each other with the third and fourth signal charge accumulation regions FD3, FD4 therebetween arranged in the one-dimensional direction A vertical direction. Along the direction perpendicular to the one-dimensional direction A, the unnecessary charge collecting region 11c is adjacent to the third signal charge accumulation region FD3, and the unnecessary charge collecting region 11d is adjacent to the fourth signal charge accumulating region FD4. The unnecessary charge collecting regions 11a, 11c are opposed to each other with the photogate electrode PG interposed therebetween in the one-dimensional direction A. The unnecessary charge collecting regions 11b, 11d are disposed opposite to each other with the photogate electrode PG therebetween in the one-dimensional direction A.
    The unnecessary charge collecting regions 11a-11d are n-type semiconductor regions having a high impurity concentration, which are formed in the second semiconductor region 5 and configured to collect the charge generated in the charge generating region as unnecessary charges.
    The well region W, when viewed from a direction perpendicular to the second main surface 1b, is formed in the second semiconductor region 5 to form the photogate electrode PG, the first and second transfer electrodes TX1, TX2, and the first to the first surround fourth signal charge accumulation areas FD1-FD4. The well region W, when viewed from the direction perpendicular to the second main surface 1b, intersects a part of each of the first to fourth signal charge accumulation regions FD1-FD4. The outer edges of the well regions W coincide approximately with the outer edges of the plurality of distance sensors P-Pι to Pn. The well region W has the same conductivity type as that of the second semiconductor region 5 and has a higher impurity concentration than the second semiconductor region 5. The well region W prevents depletion layers, which propagate upon application of voltage to the photogate electrode PG, to couple with depletion layers propagating from the first to fourth signal charge accumulation regions FD1 to FD4. This prevents crosstalk.
    The first and second signal charge accumulation regions FD1, FD2 and the unnecessary charge accumulation regions 11a, 11b are disposed away from each other along the direction perpendicular to the one-dimensional direction A on the first long side L1 side of the photogate electrode PG. The third and fourth signal charge accumulation areas FD3, FD4 and the unnecessary charge accumulation areas 11c, 11d are disposed away from each other along the direction perpendicular to the one-dimensional direction A on the second long side L2 side of the photogate electrode PG. The first to fourth signal charge accumulation areas FD1-FD4 and the unnecessary charge accumulation areas 11a-11d have a rectangular shape in a plan view. In the present embodiment, the first to fourth signal charge accumulation regions FD1-FD4 and the unnecessary charge accumulation regions 11a-11d have a square shape in a plan view and are identical in shape to each other.
    The distance sensor PN and the distance sensor PN + i are arranged one at an even position and one at an odd position, respectively. That is, in the distance image sensor RS, the distance sensors PN and PN + i are alternately arranged in the one-dimensional direction A.
    The distance sensor PN and distance sensor PN + 1 are different only in an arrangement sequence of the first to fourth signal charge accumulation areas FD1-FD4 and the unnecessary charge accumulation areas 11a-11d and in an arrangement sequence of the first to third transfer electrodes TX1-TX3. Namely, on the first long side L1 side of the photogate electrode PG, the unnecessary charge collecting region 11a, a first signal charge accumulation region FD1, a second signal charge accumulation region FD2, and an unnecessary charge accumulation region 11b are in this order from the short side side S-ι in the distance sensor PN arranged while these are arranged in this order from the side of the second short side S2 in the distance sensor PN + i. On the long side L2 side of the photogate electrode PG are the unnecessary charge accumulation area 11c, a third signal charge accumulation area FD3, a fourth signal charge accumulation area FD4, and an unnecessary charge accumulation area 11d in this order from the first short side S side are arranged in the distance sensor PN while being arranged in this order from the second short side S2 in the distance sensor PN + 1.
    On the first long side L1 side of the photogate electrode PG, the third transfer electrode TX3, the first transfer electrode TX1, the second transfer electrode TX2, and the third transfer electrode TX3 are in this order from the first short side S1 side in the distance sensor PN are arranged while being arranged in this order from the second short side S2 side in the distance sensor PN + 1. On the long side L2 side of the photogate electrode PG, the third transfer electrode TX3, the second transfer electrode TX2, the first transfer electrode TX1, and the third transfer electrode TX3 are arranged in this order from the first short side S1 side in the distance sensor PN these are arranged in this order from the side of the second short side S2 in the distance sensor PN + i.
    The fourth signal charge accumulation area FD4 of the distance sensor PN and the first signal charge accumulation area FD1 of the distance sensor Pn + i are adjacent in the one-dimensional direction A. The third signal charge accumulation region FD3 of the distance sensor Pn and the second signal charge accumulation region FD2 of the distance sensor PN + i are adjacent in the one-dimensional direction A. In the distance mapping sensor RS, as described above, the first signal charge accumulation area FD1 and the fourth signal charge accumulation area FD4 are adjacent in the one-dimensional direction A, and the second signal charge accumulation area FD2 and the third signal charge accumulation area FD3 are in the one-dimensional direction A in the two adjacent in the one-dimensional direction A. Distance sensors PN and Pn + i adjacent.
    In this embodiment, "impurity concentration is high" indicates that the impurity concentration is, for example, not less than about 1 × 10 17 cm -3, which is indicated by a "+" attached to a conductivity type. On the other hand, "impurity concentration is low" indicates that the impurity concentration is, for example, not more than about 10 × 10 15 cm -3, which is indicated by a "-» attached to a conductivity type.
    The thickness / impurity concentration of the respective semiconductor regions is / are as described below.
    First semiconductor area 3:
    Thickness 10 to 1000 pm / impurity concentration 1x1012 to 1019 cm-3 Second semiconductor region 5:
    Thickness 1 to 50 pm / impurity concentration 1x1012 to 1015 cm-3
    First to fourth signal charge accumulation areas FD1-FD4 and unnecessary charge accumulation areas 11a-11d:
    Thickness 0.1 to 1 pm / impurity concentration 1x1018 to 102 ° cm-3 well areas W:
    Thickness 0.5 to 5 pm / impurity concentration 1x1016 to 1018 cm-3 The semiconductor substrate 1 (first and second semiconductor regions 3, 5) is connected to a reference potential such as the ground potential via a back gate or a via electrode (through-via electrode) ) or something similar.
    The first transfer electrodes TX1 are disposed on the insulating layer 7 and between the first and fourth signal charge accumulation regions FD1, FD4 and the photogate electrode PG, respectively. The first transfer electrodes TX1 are respectively disposed away from the first and fourth signal charge accumulation areas FD1, FD4 and the photogate electrode PG. The first transfer electrodes TX1 cause the charge generated in the charge generation region to flow as signal charges into the first and fourth signal charge accumulation regions FD1, FD4 in response to a first transfer signal S-1 (see FIG. 9).
    The second transfer electrodes TX2 are disposed on the insulating layer 7 and between the second and third signal charge accumulation regions FD2, FD3 and the photogate electrode PG, respectively. The second transfer electrodes TX2 are respectively disposed away from the second and third signal charge accumulation areas FD2, FD3 and the photogate electrode PG. The second transfer electrodes TX2 cause the charge generated in the charge generation region to flow as signal charges to the second and third signal charge accumulation regions FD2, FD3 in response to a second transfer signal S2 different in phase from the first transfer signal Si (see FIG. 9).
    The third transfer electrodes TX3 are disposed on the insulating layer 7 and between the unnecessary charge collecting regions 11a-11d and the photogate electrode PG, respectively. The third transfer electrodes TX3 are respectively disposed away from the unnecessary charge collecting regions 11a-11d and the photogate electrode PG. The third transfer electrodes TX3 cause the charge generated in the charge generating region to flow as unnecessary charges to the unnecessary charge collecting regions 11a-11d in response to a third transfer signal S3 different in phase from the first transfer signal Si and the second transfer signal S2 (see Fig. 11).
    The first to third transfer electrodes TX1-TX3 are arranged away from each other along the direction perpendicular to the one-dimensional direction A on the side of the first long side L1 and on the side of the second long side L2 of the photogate electrode PG. The first to third transfer electrodes TX1-TX3 have a rectangular shape in a plan view. In the present embodiment, the first to third transfer electrodes TX1-TX3 have a rectangular shape with the long sides being along the direction perpendicular to the one-dimensional direction A and identical in shape with each other. The length of the long sides of the first to third transfer electrodes TX1-TX3 is, for example, approximately equal to the length of a quarter of the first long side L1 of the photogate electrode PG.
    The insulating layer 7 is provided with contact holes for exposing the surface of the second semiconductor region 5, the conductors 13 are arranged in the contact openings. The conductors 13 connect the first to fourth signal charge accumulation regions FD1-FD4 and the unnecessary charge accumulation regions 11a-11d to the outside.
    The semiconductor substrate includes Si, the SiO 2 insulating layer 7, and the photogate electrode PG and the first to third polysilicon transfer electrodes TX1-TX3, but they may be made of other materials.
    There is a 180 ° shift between the phase of the first transfer signal S-i applied to the first transfer electrodes TX1 and the phase of the second transfer signal S2 applied to the second transfer electrodes TX2. A light incident on each of the distance sensors P1 to PN is converted into a charge in the semiconductor substrate 1 (second semiconductor region 5). A portion of the charge thus generated travels as signal charges in the directions to the first transfer electrodes TX1 or to the second transfer electrodes TX2, that is, in the directions parallel to the first and second short sides S1, S2 of the photogate electrode PG a potential gradient established by a voltage applied to the photogate electrode PG and the first and second transfer electrodes TX1, TX2.
    When the first or second transfer electrodes TX1, TX2 are provided with a positive potential, a potential below the first or second transfer electrodes TX1, TX2 becomes lower than that of the semiconductor substrate 1 (second semiconductor region 5) in the portion below the photogate electrode PG with respect to drawing electrons and negative charges (electrons) in the directions to the first or second transfer electrodes TX1, TX2 to be accumulated in potential wells formed by the first to fourth signal charge accumulation regions FD1-FD4. An n-type semiconductor contains positively ionizing donors and has a positive potential for attracting electrons. When the first or second transfer electrodes TX1, TX2 are provided with a potential lower than the above positive potential (for example, the ground potential), a potential barrier is formed by the first or second transfer electrodes TX1, TX2, and the charge generated in the semiconductor substrate 1 does not become the first to fourth signal charge accumulation areas FD1-FD4 are pulled.
    A portion of the charge generated with an incidence of light on each one of the plurality of distance sensors P-Pι to Pn migrates as unnecessary charges in the directions to the third transfer electrodes TX3 corresponding to one to the photogate electrode PG and the third Transfer electrodes TX3 applied voltage potential gradient.
    When the third transfer electrodes TX3 are provided with a positive potential, a potential below the third transfer electrodes TX3 becomes lower than that of the semiconductor substrate 1 (second semiconductor region 5) in the portion below the photogate electrode PG with respect to electrons and negative charges (electrons) are drawn in the directions to the third transfer electrodes TX3 to be collected in potential wells formed by the unnecessary charge collecting areas 11a-11d. When the third transfer electrodes TX3 are provided with a potential lower than the aforementioned positive potential (for example, the ground potential), a potential barrier is formed by the third transfer electrodes TX3 and the charge generated in the semiconductor substrate 1 is not taken into the unnecessary charge collecting regions 11a -11 d pulled.
    Fig. 6 is a drawing showing potential profiles in the vicinity of the second main surface of the semiconductor substrate taken along the line III-III in Fig. 2. Fig. 7 is a drawing showing potential profiles in the vicinity of the second main surface of the semiconductor substrate the line IV-IV in Fig. 2 shows. FIG. 8 is a drawing showing potential profiles in the vicinity of the second main surface of the semiconductor substrate taken along the line V-V in FIG. 2. In FIGS. 6 to 8, the downward direction is the positive potential direction. Figs. 6 (a), (b), Figs. 7 (a), (b), and Fig. 8 (a) are drawings for explaining an operation for accumulating signal charges. Fig. 6 (c), Fig. 7 (c) and Fig. 8 (b) are drawings for explaining an operation for discharging unnecessary charges.
    6 to 8 show a potential φτχι of the areas immediately below the first transfer electrodes TX1, a potential φτχ2 of the areas immediately below the second transfer electrodes TX2, a potential φτχ3 of the areas immediately below the third transfer electrodes TX3, a potential (Ppg a potential φΡ01 of the second signal charge accumulation area FD2, a potential φΡ03 of the third signal charge accumulation area FD3, a potential (pFD4 of the fourth signal charge accumulation area FD4, a potential (p0FDa of the unnecessary charge accumulation area FD1), below the photogate electrode PG, a potential φΡ01 of the first signal charge accumulation area FD1; Charge collecting region 11a, potential rpoFDb of unnecessary charge collecting region 11b, potential (Pofdc of unnecessary charge collecting region 11c, and potential φ0 ™ of unnecessary charge collecting region 11d.
    When the potential (φτχι, <Ρτχ2, Ψτχ3) of the regions immediately below the adjacent first to third transfer electrodes TX1-TX3 is defined as a reference potential without bias, the potential φΡα of the region immediately below the photogate electrode PG becomes higher set as this reference potential. This potential (pPG of the charge generation region becomes higher than the potential φΤχι, φτχ2, φτχ3, and thus the potential profiles have a concave shape in the drawings in the charge generation region.
    The accumulation operation of signal charges will be described with reference to Figs. 6 (a), (b), Figs. 1 (a), (b), and Fig. 8 (a).
    When the phase of the first transfer signal Si applied to the first transfer electrodes TX1 is 0 °, the first transfer electrodes TX1 are provided with a positive potential. The second transfer electrodes TX2 are provided with a potential in the opposite phase, that is, the potential in the phase of 180 ° (for example, the ground potential). The photogate electrode PG is provided with a potential between the potential given to the first transfer electrodes TX and the potential given to the second transfer electrodes TX2. In this case, as shown in FIGS. 6 (a) and 7 (a), a negative charge e generated in the charge generation region flows into the potential wells of the first signal charge accumulation region FD1 and the fourth signal charge accumulation region FD4 Potential φτχι of the semiconductor immediately below the first transfer electrodes TX1 is lower than the potential (pPG of the charge generation region.
    On the other hand, the potential φτχ2 of the semiconductor immediately below the second transfer electrodes TX2 is not lowered, and thus no charge flows into the potential wells of the second signal charge accumulation area FD2 and the third signal charge accumulation area FD3. This causes the signal charges in the potential wells of the first signal charge accumulation area FD1 and the fourth signal charge accumulation area FD4 to be accumulated and accumulated. Since the first to fourth signal charge accumulation regions FD1-FD4 are doped with n-type impurities, their potential in the positive direction is concave.
    When the phase of the second transfer signal S2 applied to the second transfer electrodes TX2 is 0 °, the second transfer electrodes TX2 are provided with a positive potential, and the first transfer electrodes TX1 are provided with a potential in the opposite phase, that is Potential in the phase of 180 ° (for example, the grounding potential). The photogate electrode PG is provided with the potential between the potential given to the first transfer electrodes TX1 and the potential given to the second transfer electrodes TX2. In this case, as shown in FIGS. 6 (b) and 7 (b), negative charges e generated in the charge generation region flow into the potential wells of the second signal charge accumulation region FD2 and the third signal charge accumulation region FD3 since the potential φτχ2 of the semiconductor immediately below the second transfer electrodes TX2 becomes lower than the potential φΡ0 of the charge generation region.
    On the other hand, the potential φτχι of the semiconductor immediately below the first transfer electrodes TX1 is not lowered, and thus no charge flows into the potential wells of the first signal charge accumulation area FD1 and the fourth signal charge accumulation area FD4. This causes the signal charges in the potential wells of the second signal charge accumulation region FD2 and the third signal charge accumulation region FD3 to be accumulated and accumulated.
    While the first and second transfer signals S-i, S2 having the phase shift of 180 ° are applied to the first and second transfer electrodes TX1, TX2, the third transfer electrodes TX3 are provided with the ground potential. For this reason, as shown in Fig. 8 (a), the potential φΤχ3 of the semiconductor immediately below the third transfer electrodes TX3 is not reduced, and thus no charge flows into the potential wells of the unnecessary charge collecting regions 11a-11d.
    By the above, the signal charges in the potential wells of the first to fourth signal charge accumulation regions FD1-FD4 are collected and accumulated. The signal charges accumulated in the potential wells of the first to fourth signal charge accumulation regions FD1-FD4 are read out to the outside.
    The discharge operation of unnecessary charges will be described with reference to Figs. 6 (c), 7 (c) and 8 (b).
    The first and second transfer electrodes TX1, TX2 are provided with the ground potential. For this reason, as shown in Fig. 6 (c) and Fig. 7 (c), the potential φΤχι, φτχ2 of the semiconductor immediately below the first and second transfer electrodes TX1, TX2 is not reduced, and thus no charge flows into the potential wells first to fourth signal charge accumulation areas FD1-FD4. On the other hand, the third transfer electrodes TX3 are provided with a positive potential. In this case, as shown in Fig. 8 (b), negative charges e generated in the charge generating region flow into the potential wells of the unnecessary charge collecting regions 11a, 11d because the potential φΤχ3 of the semiconductor immediately below the third Transfer electrodes TX3 is lower than the potential φΡ0 of the charge generation region. By the above, the unnecessary charges are collected in the potential wells of the unnecessary charge collecting regions 11a-11d. The unnecessary charges collected in the potential wells of the unnecessary charge collecting regions 1 a-11 d are discharged to the outside. Namely, the unnecessary charge collecting regions 11a-11d also function as unnecessary charge discharge regions (unnecessary charge discharge processes (drain)). The unnecessary charge collecting regions 11a-11d are connected, for example, to a fixed potential.
    Fig. 9 is a timing chart of various signals.
    The following signals are shown: an operation signal So for a light source LS described later (see Fig. 12), an intensity signal LP of a reflection of light emitted from the light source LS, which has returned to the imaging area after being reflected on an object OJ has fallen (see Fig. 12), the first transfer signal Si applied to the first transfer electrodes TX1 and the second transfer signal S2 applied to the second transfer electrodes TX2. Since the first transfer signal Si is synchronized with the operation signal So, the phase of the intensity signal LP of reflection relative to the first transfer signal Si represents the time of flight of the light, indicating the distance from the range image sensor RS to the object OJ.
    An overlap between the intensity signal LP of a reflection and the first transfer signal S1 applied to the first transfer electrodes TX1 corresponds to a charge amount Q-1, which is the sum of amounts accumulated in the first and fourth signal charge accumulation areas FD1, FD4, respectively is at charges. An intersection between the intensity signal LP of a reflection and the second transfer signal S2 applied to the second transfer electrodes TX2 corresponds to a charge amount Q2 which is the sum of amounts of charges accumulated in the second and third signal charge accumulation areas FD2, FD3, respectively. In this case, the distance d (see FIG. 12) is calculated by using a ratio of the charge quantities Q1, Q2 accumulated in the first to fourth signal charge accumulation areas FD1-FD4 with an application of the first and second transfer signals S-i, S2. Namely, the distance d becomes d = (c / 2) x (TpxQ2 / (Qi + Q2)), where TP represents a pulse width of one pulse of the operation signal SD. It should be noted that c represents the speed of light.
    Fig. 10 is an overall cross-sectional view of an imaging device.
    The imaging device IM includes the distance imaging sensor RS and a wiring board WB. The distance image sensor RS is bonded to the wiring board WB via a bonding area FL in a state in which the first main surface 1a side of the semiconductor substrate 1 is opposite to the wiring board WB. The adhesion region FL comprises an insulating agent and a filling element.
    Fig. 11 is a timing chart of actual various signals.
    A duration TF of a frame consists of a duration (accumulation time) Tacc for accumulating signal charges and a duration (read duration) Tro for reading signal charges. Observing a pixel, the operation signal SD is applied with a plurality of pulses to the light source LS (see Fig. 12) in the accumulation period Tacc, and in synchronism therewith, the first and second transfer signals Si, S2 with the other respective opposite phase to each other the first and second transfer electrodes TX1, TX2 are applied. Before the distance measurement, a reset signal is applied to the first to fourth signal discharge accumulation areas FD1-FD4 for discharging the internally accumulated charges to the outside. In this example, the reset signal reset is temporarily turned on and then turned off; thereafter, a plurality of operation signals Sd are sequentially applied, and in synchronism therewith, the charge transfer is performed sequentially, thereby completely accumulating signal charges in the first to fourth signal charge accumulation areas FD1-FD4.
    Thereafter, in the readout period Tro, the signal charges accumulated in the first to fourth signal charge accumulation areas FD1 to FD4 are read out. At this time, the third transfer signal S3 to be applied to the third transfer electrodes TX3 is turned on to apply the positive potential to the third transfer electrodes TX3, thereby collecting unnecessary charges in the potential wells of the unnecessary charge collecting regions 11a-11d.
    Fig. 12 is a drawing showing an overall configuration of a distance imaging apparatus.
    The distance d to the object OJ is measured by the distance imaging device. As described above, the operation signal Sd is applied to the light source LS such as a laser light irradiation device and an LED, and the intensity signal LP of a reflected light figure reflected by the object OJ is incident on the charge generation regions of the distance imaging sensor RS. The charge quantities Q-1, Q2, which are collected in synchronization with the first and second transfer signals S-i, S2, are output pixel by pixel from the distance mapping sensor RS to supply them to an arithmetic circuit ART in synchronism with the operation signal SD. The arithmetic circuit ART calculates the distance d in each pixel as described above, and transmits the calculation result to a control unit CONT. The control unit CONT controls an operation circuit DRV for operating the light source LS, outputs the first to third transfer signals S1-S3, and has a display unit DSF display the calculation result supplied from the arithmetic circuit ART.
    Effect and effects of the distance mapping sensor RS formed as described above will be described. The effect and effect of the distance imaging sensor RS will be described below in comparison with a conventional distance imaging sensor.
    Fig. 13 is a drawing for explaining charge leakage in the conventional distance image sensor.
    In the conventional distance image sensor, each of a plurality of distance sensors Ri to Rn arranged in a one-dimensional direction includes a first signal charge accumulation region FD1 and a first transfer electrode TX1 on one side in the one-dimensional direction of the photogate electrode PG and a second signal charge accumulation region FD2 and a second transfer electrode TX2 on the other side in the one-dimensional direction of the photogate electrode PG. Namely, the plurality of distance sensors R-1 to RN are arranged one-dimensionally in the charge distribution directions. In adjacent two range sensors Rn, Rn + 1, the first signal charge accumulation area FD1 and the second signal charge accumulation area FD2 are adjacent in the one-dimensional direction. The conventional distance image sensor further includes the p-type well regions W. The well region W, when viewed from the direction perpendicular to the second main surface 1b, is formed in the second semiconductor region 5 to form the photogate electrode PG, the surround first and second transfer electrodes TX1, TX2 and the first and second signal charge accumulation areas FD1, FD2. The well region W, when viewed from the direction perpendicular to the second main surface 1b, intersects a part of each of the first and second signal charge accumulation regions FD1, FD2. The outer edges of the well regions W coincide approximately with the outer edges of the distance sensors R-ι to Rn.
    In the distance image sensor as described above, for example, when light is incident on the distance sensor Rn, a charge corresponding to the incident light is generated in the distance sensor Rn. The generated charge is distributed into the first and second signal charge accumulation areas FD1, FD2 in response to the first and second transfer signals Si, S2. At this time, a part of the charge escapes into the first and second signal charge accumulation areas FD1, FD2 of another distance sensor R. The exit amounts are substantially different depending on whether the arrangements of the first and second signal charge accumulation areas FD1, FD2 in the other distance sensor R on the distance sensor side Rn are or not.
    In the distance sensor Rn + 1, the first signal charge accumulation region FD1 is disposed on the side of the distance sensor Rn, and the second signal charge accumulation region FD2 is disposed on the opposite side to the distance sensor Rn. For this reason, when a charge from the distance sensor Rn leaks into the distance sensor Rn + 1, an exit amount B% in the first signal charge accumulation area FD1 becomes larger than an exit amount A% in the second signal charge accumulation area FD2. Similarly, when light is incident on the distance sensor Rn + 1 and a charge is emitted from the distance sensor Rn + 1 into the distance sensor Rn, since the second signal charge accumulation area FD2 is disposed on the side of the distance sensor in the distance sensor Rn, an exit amount D% becomes the second signal charge accumulation area FD2 is larger than an exit amount C% in the first signal charge accumulation area FD1.
    If the ratio of the amount of charge distributed in the first signal charge accumulation area FD1 by the first transfer electrode TX1 to the amount of charge distributed in the second signal charge accumulation area FD2 by the second transfer electrode TX2 in the distance sensors FL, Rn + i is identical, those detected by the distance sensor Rn and the distance sensor Rn + 1 measured distances be identical. However, since a charge leaks between the distance sensors Rn, Rn + 1 as described above, the amounts of charge accumulated respectively in the first and second signal charge accumulation areas FD1, FD2 are different between the distance sensor Rn and the distance sensor Rn + 1. For this reason, the distance measured by the distance sensor Rn may be different from that by the distance sensor Rn + 1.
    In contrast, in the distance mapping sensor RS according to the present embodiment, the plurality of distance sensors P-1 to PN are arranged in the one-dimensional direction A, and each of the plurality of distance sensors P-1 to PN includes the first and second signal charge accumulation areas FD1, FD2 on one side in the one-dimensional direction A of the photogate electrode PG and includes the third and fourth signal charge accumulation regions FD3, FD4 on the other side in the one-dimensional direction A of the photogate electrode PG. The first and fourth signal charge accumulation areas FD1, FD4 accumulate the signal charges which are caused to flow in response to the first transfer signal Si. The second and third signal charge accumulation areas FD2, FD3 accumulate the signal charges which are caused to flow in response to the second transfer signal S2, namely, in each of the plurality of distance sensors P-1 to PN, the first and fourth accumulation accumulation areas FD1, FD4 for accumulation the signal charges which are caused to flow in response to the first transfer signal Si are respectively arranged on both sides in the one-dimensional direction A of the charge generation region, and are the second and third signal charge accumulation regions FD2, FD3 for accumulating the signal charges caused in response to flow on the second transfer signal S2, respectively arranged on both sides of the one-dimensional direction A of the charge generation region. For this reason, in each of the plurality of distance sensors P-1 to PN, the charge exiting from the other distance sensor becomes good balance in the first and fourth signal charge accumulation areas FD1, FD4 for accumulating the signal charges caused in response to the first transfer signal S-ι and distributed into the second and third signal charge accumulation areas FD2, FD3 for accumulating the signal charges which are caused to flow in response to the second transfer signal S2. Therefore, the effects of charge crosstalk on the distance measurement between the distance sensors adjacent in the one-dimensional direction A are identical.
    The distance mapping sensor RS further comprises the unnecessary charge collecting areas 11a-11d for collecting the charge generated in the charge generating area as the unnecessary charges and the third transfer electrodes TX3 for causing the charge generated in the charge generating area to be unnecessary charges the unnecessary charge-collecting areas 11a, 11b flows in response to the third transfer signal S3 different in one phase from the first and second transfer signals S-1, S2. For this reason, the unnecessary charges can be discharged to the outside, which improves the measurement accuracy of a distance.
    In each of the plurality of distance sensors P-1 to Pn, the first and second transfer electrodes TX1, TX2 are disposed opposite to each other with the photogate electrode PG therebetween in the one-dimensional direction A. Namely, in each of the plurality of distance sensors P- to PN, the first and second transfer electrodes TX1, TX2 are arranged without imbalance in the direction perpendicular to the one-dimensional direction A. For this reason, even if light falls only on a portion of the photogate electrode PG in the direction perpendicular to the one-dimensional direction A and there is an imbalance of charge generated in the charge generating region in the direction perpendicular to the one-dimensional direction A, becomes produces less imbalance between charge quantities distributed by the first and second transfer electrodes TX1, TX2. As a result, the accuracy of a measured distance is improved.
    The present invention need not be limited to the above embodiment. For example, in the above embodiment, the unnecessary charge collecting regions 11-11b and the third transfer electrodes TX3 are disposed on the first long side L1 side or the second long side L2 side of the photogate electrode PG, however, the present invention need not be limited to it.
    Fig. 14 is a schematic plan view showing pixels constituting the imaging area of the distance image sensor according to a modification example.
    As shown in the same drawing, the distance mapping sensor RS according to the modification example is different from the distance mapping sensor RS according to the embodiment, mainly in that each of the plurality of distance sensors P-1 to Pn has an unnecessary charge collecting area 11e and an unbal to-charge accumulation area 11 f, which are arranged on the side of the first short side S1 and on the side of the second short side S2 respectively in place of the unnecessary charge accumulation areas 11-11b, which are on the side of the first long side L1 and L2 are disposed on the side of the second long side L2, and two third transfer electrodes TX3, which are arranged on the side of the first short side S1 and on the side of the second short side S2, instead of the four third transfer electrodes TX3, which the side of the first long side L1 and on the side of the second long side L2 are arranged.
    The unnecessary charge collecting region 1e is disposed away from the photogate electrode PG on the first short side S1 side of the photogate electrode PG. The unnecessary charge collecting area 11f is disposed away from the photogate electrode PG on the second short side S2 side of the photogate electrode PG. That is, the unnecessary charge collecting regions 11e, 11f with the photogate electrode PG therebetween are arranged in the direction perpendicular to the one-dimensional direction A and away from the photogate electrode PG. The unnecessary charge collecting areas 11 e, 11 f have a rectangular shape in a plan view. In this example, they are in a rectangular shape, identical in shape to each other and with the long sides parallel to the one-dimensional direction A. The first to fourth signal charge accumulation regions FD1-FD4 are formed in a rectangle in a plan view, identical to each other in a shape and having the long sides parallel to the direction perpendicular to the one-dimensional direction A direction.
    The third transfer electrodes TX3 are respectively disposed between the unnecessary charge collecting regions 11e, 11f and the photogate electrode PG. The third transfer electrodes TX3 are respectively disposed away from the unnecessary charge collecting regions 11e, 11f and the photogate electrode PG. In this example, the third transfer electrodes TX3 are formed in a rectangular shape in a plan view, identical in shape with each other, and have the long sides parallel to the one-dimensional direction A. The length of each of the long sides is equal to, for example, the length of the first and second short sides S1, S2 of the photogate electrode PG. The length of each long side of the first and second transfer electrodes TX1, TX2 is, for example, approximately equal to half the length of each of the first long sides L1, L2 of the photogate electrode PG.
    The distance mapping sensor RS of this configuration can also achieve the same effect and effect as the distance mapping sensor RS shown in FIG. The sensor may further include the unnecessary charge collecting regions 11e, 11f and third transfer electrodes TX3 disposed on the first short side S1 side or the second short side S2 side of the photogate electrode PG, in addition to the unnecessary ones Charge collecting areas 11 a-11 d and the third transfer electrodes TX3, which are arranged on the side of the first long side L1 and on the side of the second long side L2 of the photogate electrode PG include.
    The number of unnecessary charge collecting areas need not be limited to four or two, but may be set as necessary or may be zero. The arrangement of the unnecessary charge collecting regions may be, for example, between the first and second transfer electrodes TX1, TX2, and these may be arranged as needed.
    The distance imaging sensor RS is the line sensor in which the plurality of distance sensors P-i-PN are each arranged one-dimensionally, but they may be arranged two-dimensionally. In this case, the sensor can easily capture a two-dimensional image. The two-dimensional image can also be obtained by rotating the line sensor or by using two line sensors for scanning.
    The distance image sensor RS is not limited to the front-exposed distance image sensor. The distance imaging sensor RS may be a back-illuminated distance imaging sensor.
    The charge generation region in which a charge corresponding to an incident light is generated may be formed of a photodiode (for example, an embedded photodiode or the like).
    The p-type and n-type charge types in the distance image sensor RS according to the present embodiment may be replaced with those described above.
    Industrial Applicability The present invention is applicable to the charge-distribution-type distance-imaging sensors.
    权利要求:
    Claims (3)
    [1]
    Reference Numerals 11a to 11f Unnecessary charge collection areas; A one-dimensional direction; FD1 first signal charge accumulation area; FD2 second signal charge accumulation area; FD3 third signal charge accumulation area; FD4 fourth signal charge accumulation area; P-1 to PN distance sensors; PG Photogate electrode; RSS distance mapping sensor; 51 first transfer signal; 52 second transfer signal; 53 third transfer signal; TX1 first transfer electrode; TX2 second transfer electrode; TX3 third transfer electrode. claims
    A distance image sensor (RS) in which a plurality of distance sensors (Pi-Pn) are arranged in a one-dimensional direction, each of the plurality of distance sensors (Pi-Pn) comprising: a charge generation region in which a charge corresponding to incident light is generated ; first and second signal charge accumulation regions (FD1, FD2) removed from the charge generation region on one side in the one-dimensional direction of the charge generation region and disposed away from each other along a direction perpendicular to the same one-dimensional direction and configured as signal charges for accumulating the charge generated in the charge generation region are; a third signal charge accumulation region (FD3) which is removed from the charge generation region on the other side in the same one-dimensional direction of the charge generation region and located to the first signal charge accumulation region (FD1) opposite to the charge generation region therebetween in the same one-dimensional direction and accumulates in the charge generation region generated charge is formed as a signal charge; a fourth signal charge accumulation region (FD4) which is removed from the charge generation region on the other side in the same one-dimensional direction of the charge generation region and disposed opposite to the second signal charge accumulation region (FD2) opposite to the charge generation region therebetween in the same one-dimensional direction and accumulates those generated in the charge generation region Charge is formed as a signal charge; two first transfer electrodes (TX1) each disposed between the first and fourth signal charge accumulation regions (FD1, FD4) and the charge generation region and configured to cause the charge generated in the charge generation region to be the respective signal charges in the first and fourth signal charge accumulation regions (TX); FD1, FD4) in response to a first transfer signal; and two second transfer electrodes (TX2) each disposed between the second and third signal charge accumulation regions (FD2, FD3) and the charge generation region and configured to cause the charge generated in the charge generation region to be the respective signal charges to the second and third signal charge accumulation regions in response to a second transfer signal different in one phase from the first transfer signal, and wherein in any two said range sensors adjacent in the same one-dimensional direction, the first signal charge accumulation area (FD1) of a first of the two range sensors and the fourth signal charge accumulation area (FD4 ) of a second one of the arbitrary two distance sensors are adjacent in the same one-dimensional direction and the second signal charge accumulation area (FD2) of the first one of the arbitrary two distance sensors and the third Si The charge accumulation area (FD3) of the second of the any two distance sensors are adjacent in the same one-dimensional direction.
    [2]
    The distance image sensor according to claim 1, further comprising: a plurality of unnecessary charge collection regions (11a-11d) disposed and formed away from the charge generation region on one side and on the other side in the same one-dimensional direction of the charge generation region are for accumulating the charge generated in the charge generating region as unnecessary charges; and a plurality of third transfer electrodes (TX3), each disposed between the plurality of unnecessary charge collection regions (11a-11d) and the charge generation region, and configured to cause the charge generated in the charge generation region to be the same or unnecessary Charges flow into the plurality of unnecessary charge collection areas (11a-11d) in response to a third transfer signal different in phase from the first and second transfer signals.
    [3]
    A distance image sensor according to claim 1, further comprising: a plurality of unnecessary charge collecting regions (11 a-11 d) disposed with the charge generation region therebetween in the direction perpendicular to the same one-dimensional direction and away from the charge generation region, and being designed for Collecting the charge generated in the charge generation region as unnecessary charges; and a plurality of the third transfer electrodes (TX3) respectively disposed between the plurality of unnecessary charge collection regions (11a-11d) and the charge generation region and configured to cause the charge generated in the charge generation region to be the respective unnecessary one Charges flow into the plurality of unnecessary charge collection areas (11a-11d) in response to a third transfer signal different in phase from the first and second transfer signals (TX1, TX2).
    类似技术:
    公开号 | 公开日 | 专利标题
    DE112012006401T5|2015-02-26|Area sensor and area image sensor
    EP2290393B1|2019-06-19|Concept for optical distance measurement
    DE112005000411T5|2007-03-15|Runtime-range-finding sensor
    DE112010003958B4|2019-02-07|Photoelectric conversion element, light receiving device, light receiving system and distance measuring device
    EP3191870B1|2018-04-18|Tof distance sensor
    DE112015002711T5|2017-02-23|Distance measurement device
    DE112015003846T5|2017-05-04|Distance measuring method and distance measuring device
    DE102011076635B3|2012-10-18|Photodetector i.e. lateral drift field photodetector, for detecting electromagnetic radiation, has bus control electrode arranged in region of trough adjacent to connection doping regions, transfer control electrodes and detection region
    DE102016209319A1|2016-12-22|Pixel cell for a sensor and corresponding sensor
    DE112010003984B4|2019-01-24|Photoelectric conversion element, light receiving device, light receiving system and distance measuring device
    DE4413824A1|1995-08-24|Solid-state image pick=up e.g. for horizontal CCD
    EP1636610A1|2006-03-22|Detection of electromagnetic radiation
    EP3611535B1|2021-07-14|Detection of light with a plurality of avalanche photodiode elements
    CH711151B1|2017-10-13|Range imaging sensor.
    DE102011056369A1|2013-06-13|Semiconductor device with trench gate
    DE112016004726T5|2018-07-19|Distance measuring device
    DE102013208804B4|2016-07-21|Light transit time sensor with switchable background light suppression
    DE102018108794B3|2019-05-02|Light transit time pixel and light transit time sensor with corresponding pixels
    DE112013005141T5|2015-08-06|Distance sensor and distance image sensor
    DE102012112765B4|2018-11-29|Photo cell devices for phase-sensitive detection of light signals and manufacturing processes
    DE112012005967T5|2014-11-13|Area sensor and area image sensor
    DE102006002732B4|2015-10-01|Photonic mixer and method for its operation
    DE102013102061A1|2014-09-04|Semiconductor component for detecting electromagnetic radiation of photosensitive semiconductor substrate, has first and second substrate portions having read-out nodes whose charge carriers are read out and do not pass from one to other
    DE102020120788B3|2021-12-09|MULTIPIXEL PHOTODETECTOR WITH AVALANCHE PHOTODIODS, RADIATION DETECTOR AND POSITRON EMISSION TOMOGRAPH
    DE102013209161A1|2014-12-04|Transit Time Sensor
    同族专利:
    公开号 | 公开日
    CH711151B8|2017-12-15|
    CN106233157B|2018-08-28|
    WO2015159977A1|2015-10-22|
    DE112015001877T5|2017-01-12|
    JP2015206634A|2015-11-19|
    US10436908B2|2019-10-08|
    KR102232213B1|2021-03-24|
    KR20160144988A|2016-12-19|
    JP6315679B2|2018-04-25|
    US20170031025A1|2017-02-02|
    CN106233157A|2016-12-14|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JPS582999B2|1977-10-20|1983-01-19|Sekiguchi Kk|
    US6906793B2|2000-12-11|2005-06-14|Canesta, Inc.|Methods and devices for charge management for three-dimensional sensing|
    WO2002049366A1|2000-12-14|2002-06-20|3Dv Systems, Ltd.|3d camera|
    JP3906859B2|2004-09-17|2007-04-18|松下電工株式会社|Distance image sensor|
    JP5153062B2|2005-07-13|2013-02-27|新光電気工業株式会社|Solid oxide fuel cell|
    JP5110520B2|2005-08-30|2012-12-26|国立大学法人静岡大学|Semiconductor distance measuring element and solid-state imaging device|
    JP2008122223A|2006-11-13|2008-05-29|Suzuki Motor Corp|Distance measuring device|
    JP5528739B2|2009-08-12|2014-06-25|株式会社ジャパンディスプレイ|Detection device, display device, and method for measuring proximity distance of object|
    JP5244076B2|2009-11-24|2013-07-24|浜松ホトニクス株式会社|Distance sensor and distance image sensor|
    JP5558999B2|2009-11-24|2014-07-23|浜松ホトニクス株式会社|Distance sensor and distance image sensor|
    JP5483689B2|2009-11-24|2014-05-07|浜松ホトニクス株式会社|Distance sensor and distance image sensor|
    JP5460304B2|2009-12-24|2014-04-02|株式会社第一興商|Karaoke device compatible with personal microphones|
    JP5518667B2|2010-10-12|2014-06-11|浜松ホトニクス株式会社|Distance sensor and distance image sensor|
    JP2012083213A|2010-10-12|2012-04-26|Hamamatsu Photonics Kk|Distance sensor and distance image sensor|
    US8520114B2|2011-06-01|2013-08-27|Global Oled Technology Llc|Apparatus for displaying and sensing images|
    US9229096B2|2011-07-27|2016-01-05|Semiconductor Components Industries, Llc|Time-of-flight imaging systems|KR20200009643A|2018-07-19|2020-01-30|삼성전자주식회사|3D image sensor based on ToF, and electronic apparatus comprising the image sensor|
    法律状态:
    2017-10-31| PK| Correction|Free format text: DAS KORREKTE DATUM DER PRIORITAET IST 18.04.2014. |
    2017-12-15| PK| Correction|Free format text: BERICHTIGUNG PRIORITAET. |
    优先权:
    申请号 | 申请日 | 专利标题
    JP2014086175A|JP6315679B2|2014-04-18|2014-04-18|Distance image sensor|
    PCT/JP2015/061876|WO2015159977A1|2014-04-18|2015-04-17|Range image sensor|
    [返回顶部]